J349 查看數據表（PDF） - Toshiba

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J349

Field Effect Transistor Silicon P Channel MOS Type

Toshiba 

2SJ349

SAFE OPERATING AREA

−100

ID MAX. (PULSED)*

−50

−30 ID MAX.

(CONTINUOUS)

100 μs*

1 ms*

10 ms*

−10

−5

DC OPERATION

−3

Tc = 25°C

* SINGLE

NONREPETITIVE

−1 PULSE Tc = 25°C

Curves must be

derated linearly with

−0.5 increase in

temperature.

−0.3

−1

−3

−10

VDSS MAX.

−30

−100

DRAIN-SOURCE VOLTAGE VDS (V)

5

2006-11-16

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