2SJ340 查看數據表（PDF） - SANYO -> Panasonic

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2SJ340

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ340

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

PW≤10µs, duty cycle≤1%

Tc=25˚C

Parameter

Drain-to-Source Breakdown Voltage

Gate-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Marking:J304

Symbol

Conditions

V(BR)DSS

V(BR)GSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=–1mA, VGS=0

IG=±100µA, VDS=0

VDS=–60V, VGS=0

VGS=±16V, VDS=0

VDS=–10V, ID=–1mA

VDS=–10V, ID=–15A

ID=–15A, VGS=–10V

ID=–15A, VGS=–4V

VDS=–20V, f=1MHz

VDS=–20V, f=1MHz

VDS=–20V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=–30A, VGS=0

Switching Time Test Circuit

Vin

0V

--10V

PW=10µs

D.C.≤1%

P.G

Vin

G

50Ω

VDD=--30V

ID=--15A

RL=2Ω

D

VOUT

2SJ340

S

Ratings

Unit

–60 V

±20 V

–30 A

–120 A

1.65 W

70 W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min

typ

max

–60

V

±20

V

–100 µA

±10 µA

–1.0

–2.0 V

15

25

S

30

40 mΩ

40

55 mΩ

3800

pF

1200

pF

300

pF

30

ns

150

ns

450

ns

220

ns

–1.0 –1.5 V

No.6420–2/4

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