2SJ246S 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SJ246S Datasheet PDF : 7 Pages
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2SJ246 L , 2SJ246 S
SILICON P-CHANNEL MOS FET
Application
High speed power switching
Features
• Low on–resistance
• High speed switching
• Low drive current
• 4V gate drive device can be driven from
5V source.
• Suitable for Switching regulator, DC – DC
converter
DPAK–1
4
12 3
2, 4
1
3
4
123
1. Gate
2. Drain
3. Source
4. Drain
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
–30
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
–7
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
–28
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
–7
A
———————————————————————————————————————————
Channel dissipation
Pch**
20
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
* PW ≤ 10 µs, duty cycle ≤ 1 %
** Value at Tc = 25 °C
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