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2SJ246S 查看數據表(PDF) - Hitachi -> Renesas Electronics

零件编号
产品描述 (功能)
生产厂家
2SJ246S
Hitachi
Hitachi -> Renesas Electronics Hitachi
2SJ246S Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
2SJ246 L , 2SJ246 S
Table 2 Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max Unit Test conditions
———————————————————————————————————————————
Drain to source breakdown
V(BR)DSS –30
voltage
V
ID = –10 mA, VGS = 0
———————————————————————————————————————————
Gate to source breakdown
voltage
V(BR)GSS ±20
V
IG = ±100 µA, VDS = 0
———————————————————————————————————————————
Gate to source leak current
IGSS
±10 µA VGS = ±16 V, VDS = 0
———————————————————————————————————————————
Zero gate voltage drain current IDSS
–100 µA VDS = –25 V, VGS = 0
———————————————————————————————————————————
Gate to source cutoff voltage VGS(off)
–1.0 —
–2.5 V
VDS = –10 V, ID = –1 mA
———————————————————————————————————————————
Static drain to source on state RDS(on)
resistance
0.12 0.17 ID = –4 A
VGS = –10 V
————————————————————————
0.21 0.31 ID = –4 A
VGS = –4 V
———————————————————————————————————————————
Forward transfer admittance |yfs|
3.0
5.0
S
VDS = –10 V
ID = –4 A
———————————————————————————————————————————
Input capacitance
Ciss
660
pF VDS = –10 V
————————————————————————————————
Output capacitance
Coss
465
pF VGS = 0
————————————————————————————————
Reverse transfer capacitance Crss
180
pF f = 1 MHz
———————————————————————————————————————————
Turn–on delay time
td(on)
10
ns VGS = –10 V
————————————————————————————————
Rise time
tr
55
ns ID = –4 V
————————————————————————————————
Turn–off delay time
td(off)
135
ns RL = 7.5
————————————————————————————————
Fall time
tf
135
ns
———————————————————————————————————————————
Body–drain diode forward
VDF
voltage
–1.2 —
V
IF = –7 A, VGS = 0
———————————————————————————————————————————
Body–drain diode reverse
trr
90
µs IF = –7 A, VGS = 0,
recovery time
diF / dt = 50 A / µs
———————————————————————————————————————————

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