2SJ319 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SJ319

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ319(L), 2SJ319(S)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–20

Pulse Test

–16

–12

I D = –5 A

–8

–4

–2 A

–1 A

0

–4 –8 12 –16 –20

Gate to Source Voltage V GS (V)

Static Drain to Source on State Resistance

vs. Drain Current

10

5 VGS = –10 V

Pulse Test

2

1

0.5

0.2

0.1

–0.2

–0.5 –1 –2

–5 –10

Drain Current I D (A)

Static Drain to Source on State Resistance

vs. Temperature

5

4

3

I D = –5 A

2

–2 A

–1 A

1

VGS = –10 V

Pulse Test

0

–40

0

40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance vs.

Drain Current

3

2

Tc = –25 °C

1

25 °C

0.5

75 °C

0.2 V DS = –10 V

Pulse Test

0.1

–0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10

Drain Current I D (A)

4

Share Link: