2SJ319S 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SJ319S Datasheet PDF : 11 Pages
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Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
di/dt = 50 A/µs, VGS = 0
10
duty < 1 %, Ta = 25 °C
5
–0.05 –0.1 –0.2 –0.5 –1 –2
–5
Reverse Drain Current I DR (A)
2SJ319(L), 2SJ319(S)
1000
Typical Capacitance vs.
Drain to Source Voltage
500
Ciss
200
100
Coss
50
VGS = 0
20
f = 1 MHz
10
Crss
5
0 –10 –20 –30 -40 –50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
VDD = –50 V
–100 V
–100
–150 V
–4
V DS
–200
–300
V DD = –150 V
–100 V
–8
–50 V
–12
–400
V GS
–16
–500
0
4
8
12 16
Gate Charge Qg (nc)
–20
20
Switching Characteristics
500
V GS = –10 V, V DD = –30 V
duty < 1 %, PW = 2 µs
200
100
t d(off)
50
tf
20
tr
t d(on)
10
5
–0.05 –0.1 –0.2 –0.5 –1 –2 –5 –10
Drain Current I D (A)
5
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