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2SJ361 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SJ361
Silicon P-Channel MOS FET
Hitachi -> Renesas Electronics
2SJ361 Datasheet PDF : 9 Pages
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2SJ361
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
V
DSS
V
GSS
I
D
I *
1
D(pulse)
I
DR
Pch*
2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW
≤
10
µ
s, duty cycle
≤
1%
2. Value on the alumina ceramic board (12.5
×
20
×
0.7 mm)
3. Marking is “RY”.
Ratings
–20
±
20
–2
–4
–2
1
150
–55 to +150
Unit
V
V
A
A
A
W
°
C
°
C
2
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