2SJ361 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ361

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ361

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS –20

Gate to source breakdown

voltage

V(BR)GSS ±20

Gate to source leak current

I GSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–0.5

—

—

Forward transfer admittance |yfs|

Input capacitance

Ciss

0.15

—

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ Max

—

—

—

—

—

±10

—

–10

—

–1.5

0.28 0.4

0.85 1.5

0.3

—

3.2

—

130 —

0.6

—

350 —

1650 —

7280 —

6950 —

–1.0 —

530 —

Unit

V

V

µA

µA

V

Ω

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = –10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = –16 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –1 A, VGS = –10 V

ID = –0.4 A, VGS = –2.5 V

ID = –1 A, VDS = –10 V

VDS = –10 V, VGS = 0,

f = 1 MHz

ID = –1 A, VGS = –10 V,

RL = 10 Ω

IF = –2 A, VGS = 0

IF = –2 A, VGS = 0,

diF/dt = 20 A/µs

3

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