2SJ387L 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ387L

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ387(L), 2SJ387(S)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

–20

Gate to source breakdown

voltage

V(BR)GSS

±10

Gate to source leak current IGSS

Zero gate voltage drain current IDSS

Gate to source cutoff voltage VGS(off)

Static drain to source on state RDS(on)

resistance

—

—

–0.5

—

—

Typ

—

—

—

—

—

0.05

0.07

Max Unit

—

V

—

V

±10 µA

–100 µA

–1.5 V

0.07 Ω

0.1 Ω

Forward transfer admittance |yfs|

7

12

—

S

Input capacitance

Ciss

—

1170 —

pF

Output capacitance

Coss —

860 —

pF

Reverse transfer capacitance Crss

—

310 —

pF

Turn-on delay time

t d(on)

Rise time

tr

Turn-off delay time

t d(off)

Fall time

tf

Body to drain diode forward VDF

voltage

—

20

—

ns

—

325 —

ns

—

350 —

ns

—

425 —

ns

—

–1.0 —

V

Body to drain diode reverse trr

recovery time

—

240 —

ns

Note: 1. Pulse Test

Test conditions

ID = –10 mA, VGS = 0

IG = ±200 µA, VDS = 0

VGS = ±6.5 V, VDS = 0

VDS = –16 V, VGS = 0

ID = –1 mA, VDS = –10 V

ID = –5 A

VGS = –4 V*1

ID = –5 A

VGS = –2.5 V*1

ID = –5 A

VDS = –10 V*1

VDS = –10 V

VGS = 0

f = 1 MHz

ID = –5 A

VGS = –4 V

RL = 2 Ω

IF = –10 A, VGS = 0

IF = –10 A, VGS = 0,

diF/dt = 20 A/µs

3

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