2SJ387L 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SJ387L Datasheet PDF : 10 Pages
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2SJ387(L), 2SJ387(S)
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
–100
10 µs
–30
100 µs
–10
–3
–1
OperationDCinOPpeWra=tio1n0
this area is
limited by R DS(on)
ms
(Tc
1 ms
(1shot)
= 25 °C)
–0.3
–0.1 Ta = 25 °C
–0.5 –1 –2 –5 –10 –20 –50
Drain to Source Voltage V DS (V)
Typical Output Characteristics
–20
–10 V
Pulse Test
–16
–5 V
–4 V
–12
–2.5 V
–2 V
–8
–4
VGS = –1.5 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V DS (V)
Typical Transfer Characteristics
–10
V DS = –10 V
Pulse Test
–8
–6
–4
Tc = –25 °C
–2
25 °C
75 °C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V GS (V)
4
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