2SJ387 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SJ387

Silicon P-Channel MOS FET

Hitachi -> Renesas Electronics 

2SJ387(L), 2SJ387(S)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–0.5

Pulse Test

–0.4

–0.3

I D = –5 A

–0.2

–0.1

–2 A

–1 A

0

–2 –4 –6 –8 –10

Gate to Source Voltage V GS (V)

Static Drain to Source on State Resistance

vs. Drain Current

1

Pulse Test

0.5

0.2

0.1

VGS = –2.5 V

0.05

–4 V

0.02

0.01

–0.5 –1 –2 –5 –10 –20 –50

Drain Current I D (A)

Static Drain to Source on State Resistance

vs. Temperature

0.2

Pulse Test

0.16

0.12

VGS = –2.5 V

0.08

I D = –5 A

–1, –2 A

–5 A

0.04

–4 V

–1 A –2 A

0

–40

0

40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance vs.

Drain Current

50

20

Tc = –25 °C

10

25 °C

5

75 °C

2

1

0.5

–0.1 –0.2 –0.5 –1

Drain Current

V DS = –10 V

Pulse Test

–2 –5 –10

I D (A)

5

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