2SJ181S 查看數據表（PDF） - Renesas Electronics
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2SJ181S Datasheet PDF : 8 Pages
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2SJ181(L), 2SJ181(S)
Static Drain to Source on State Resistance
vs. Temperature
40
Pulse Test
VGS = –10 V
32
ID = –0.5 A
24
–0.2 A
16
–0.1 A
8
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
10
–0.05 –0.1 –0.2
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
–0
0
VDD = –100 V
–250 V
–200
–400 V
–4
–400
VDS
–600
VGS
VDD = –100 V
–250 V
–400 V
–800
ID = –0.5 A
–1000
0
4
8
12 16
Gate Charge Qg (nc)
–8
–12
–16
–20
20
Forward Transfer Admittance vs.
Drain Current
2
1
Tc = –25°C
0.5 25°C
75°C
0.2
0.1
0.05
0.02
–0.05 –0.1 –0.2
VDS = –20 V
Pulse Test
–0.5 –1 –2 –5
Drain Current ID (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300
Ciss
100
Coss
30
10
Crss
3 VGS = 0
f = 1 MHz
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
200
100
tf
50
td(off)
20
tr
10
td(on)
5
–0.05 –0.1 –0.2 –0.5 –1 –2
–5
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
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