2SJ387S 查看數據表（PDF） - Renesas Electronics
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2SJ387S Datasheet PDF : 8 Pages
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2SJ387(L), 2SJ387(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–20
–10 V
Pulse Test
–16
–5 V
–4V
–12
–2.5 V
–2 V
–8
–4
VGS = –1.5 V
0
0
–2 –4 –6 –8 –10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–0.5
Pulse Test
–0.4
–0.3
–0.2
ID = –5 A
–0.1
–2 A
–1 A
0
0
–2 –4 –6 –8 –10
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 7
Maximum Safe Operation Area
–100
10 µs
–30
100 µs
–10
–3
–1
DC OPpWera=ti1o0n
Operation in
this area is
1 ms
m(Tsc(=12s5h°oCt))
limited by RDS (on)
–0.3
Ta = 25°C
–0.1
–0.5 –1 –2
–5 –10 –20 –50
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
–10
VDS = –10 V
Pulse Test
–8
–6
–4
Tc = –25°C
–2
25°C
75°C
0
0
–1 –2 –3 –4 –5
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
VGS = –2.5 V
0.05
–4 V
0.02
0.01
–0.5 –1 –2
–5 –10 –20 –50
Drain Current ID (A)
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