2SK0614 查看數據表（PDF） - Panasonic Corporation
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2SK0614 Datasheet PDF : 3 Pages
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Silicon MOS FETs (Small Signal)
2SK0614 (2SK614)
Silicon N-Channel MOS FET
For switching
I Features
G Low ON-resistance RDS(on)
G High-speed switching
G Allowing to be driven directly by CMOS and TTL
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Unit
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDS
VGSO
ID
IDP
PD
Tch
Tstg
80
V
20
V
±0.5
A
±1
A
750
mW
150
°C
−55 to +150
°C
5.0±0.2
unit: mm
4.0±0.2
0.7±0.1
0.45+–00..115
2.5+–00..26
2.5+–00..26
0.45+–00..115
1 23
1: Source
2: Drain
3: Gate
JEDEC: TO-92
EIAJ: SC-43
TO-92-A1 Package
I Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain to Source cut-off current IDSS
Gate to Source leakage current IGSS
Drain to Source breakdown voltage VDSS
Gate threshold voltage
Drain to Source ON-resistance
Vth
RDS(on)*1
Forward transfer admittance
| Yfs |
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Turn-on time
ton*2
Turn-off time
toff*2
*1 Pulse measurement
*2 ton, toff measurement circuit
VDS = 60V, VGS = 0
VGS = 20V, VDS = 0
IDS = 100µA, VGS = 0
ID = 1mA, VDS = VGS
ID = 0.5A, VGS = 10V
ID = 0.2A, VDS = 15V, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
Vin = 10V
t = 1µS
f = 1MHZ
50Ω
Vout
Vin
68Ω
VDD = 30V
Vout
10% Vin
90% Vout
ton
10%
90%
toff
min
typ
max
Unit
10
µA
0.1
µA
80
V
1.5
3.5
V
2
4
Ω
300
mS
45
pF
30
pF
8
pF
15
ns
20
ns
Note) The part number in the parenthesis shows conventional part number.
277
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