2SJ508 查看數據表（PDF） - Toshiba
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2SJ508 Datasheet PDF : 3 Pages
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2SJ508
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ508
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l 4 V gate drive
l Low drain−source ON resistance
: RDS (ON) = 1.35 Ω (typ.)
l High forward transfer admittance : |Yfs| = 0.7 S (typ.)
l Low leakage current : IDSS = −100 µA (VDS = −100 V)
l Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Drain power dissipation
(Note 2)
Single pulse avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy (Note 4)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
Rating
Unit
−100
V
−100
V
±20
V
−1
A
−3
A
0.5
W
1.5
W
136.5
mJ
−1
A
0.05
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
―
TOSHIBA
2−5K1B
Weight: 0.05 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Marking
Thermal resistance, channel to
ambient
Rth (ch−a)
250
°C / W
ZE
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A
Note 4: Repetitive rating: Pulse width limited by maximum channel temperature
(The two digits represent
This transistor is an electrostatic sensitive device. Please handle with caution.
the part number.)
1
2002-06-26
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