2SJ508 查看數據表（PDF） - Toshiba

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2SJ508

Field Effect Transistor Silicon P Channel MOS Type

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Gate leakage current

Drain cut−off current

Drain−source breakdown

voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

Symbol

Test Condition

IGSS

IDSS

VGS = ±16 V, VDS = 0 V

VDS = −100 V, VGS = 0 V

V (BR) DSS ID = −10 mA, VGS = 0 V

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VDS = −10 V, ID = −1 mA

VGS = −4 V, ID = −0.5 A

VGS = −10 V, ID = −0.5 A

VDS = −10 V, ID = −0.5 A

VDS = −10 V, VGS = 0 V, f = 1 MHz

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

toff

Total gate charge (Gate−source

plus gate−drain)

Qg

VDD ≈ −80 V, VGS = −10 V,

Gate−source charge

Qgs

ID = −1 A

Gate−drain (“miller”) charge

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = −1 A, VGS = 0 V

IDR = −1 A, VGS = 0 V

dIDR / dt = 50 A / µs

2SJ508

Min Typ. Max Unit

—

—

±10

µA

—

— −100 µA

−100 —

—

V

−0.8

— −2.0

V

— 1.68 2.5

Ω

— 1.34 1.9

0.3

0.7

—

S

—

135

—

—

22

—

pF

—

48

—

—

20

—

—

32

—

ns

—

25

—

—

130

—

—

6.3

—

—

4.1

—

nC

—

2.2

—

Min Typ. Max Unit

—

—

−1

A

—

—

−3

A

—

—

1.5

V

—

90

—

ns

—

180

—

nC

2

2002-06-26

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