2SJ522 查看數據表（PDF） - SANYO -> Panasonic

零件编号

产品描述 (功能)

生产厂家

2SJ522

P-Channel Silicon MOSFET

SANYO -> Panasonic 

2SJ522

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Electrical Characteristics at Ta=25°C

Tc=25°C

Conditions

Parameter

Symbol

Conditions

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Sourse Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Marking : J522

V(BR)DSS

IDSS

IGSS

VGS(off)

yfs

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=--10mA, VGS=0

VDS=--320V, VGS=0

VGS=±30V, VDS=0

VDS=--10V, ID=--1mA

VDS=--10V, ID=--2.5A

ID=--2.5A, VGS=--10V

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

VDS=--20V, f=1MHz

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

See specified Test Circuit.

IS=--5A, VGS=0

*(Note) Be careful in handling the 2SJ522 because it has no protection diode between gate and source.

Ratings

Unit

--400

V

±30

V

--5

A

--20

A

1.65

W

70

W

150

°C

--55 to +150

°C

Ratings

Unit

min

typ

max

--400

V

--1.0 mA

±100

nA

--2.0

--3.0

V

1.3

2.6

S

1.5

2.0

Ω

1500

pF

240

pF

90

pF

25

ns

70

ns

340

ns

150

ns

--1.5

V

Switching Time Test Circuit

VIN

0V

--10V

PW=10µs

D.C.≤1%

VIN

G

VDD= --200V

ID= --2.5A

RL=80Ω

D

VOUT

P.G

50Ω

2SJ522

S

No.7127-2/4

Share Link: