2SJ527L 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

生产厂家

2SJ527L

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SJ527(L),2SJ527(S)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–5

Pulse Test

–4

–3

–2

–1

–1 A

I D = –5 A

–2 A

0

–4 –8 –12 –16 –20

Gate to Source Voltage V GS (V)

Static Drain to Source on State Resistance

vs. Drain Current

10

Pulse Test

3

1

–4 V

0.3

VGS = –10 V

0.1

–0.1 –0.3

–1

–3

–10 –30

Drain Current I D (A)

Static Drain to Source on State Resistance

vs. Temperature

2.0

Pulse Test

1.6

1.2

I D = –4 A

0.8

VGS = –4 V

0.4

–2 A

–5 A –1 A

–1, –2 A

0

–10 V

–40

0

40 80 120 160

Case Temperature Tc (°C)

Forward Transfer Admittance vs.

Drain Current

10

5

Tc = –25 °C

2

75 °C

1

25 °C

0.5

0.2

V DS = –10 V

Pulse Test

0.1

–0.1 –0.2 –0.5 –1 –2 –5 –10

Drain Current I D (A)

4

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