Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
零件编号
产品描述 (功能)
2SJ527L 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SJ527L
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ527L Datasheet PDF : 9 Pages
1
2
3
4
5
6
7
8
9
Body–Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
V
GS
= 0, Ta = 25 °C
10
–0.1 –0.2 –0.5 –1 –2 –5 –10
Reverse Drain Current I
DR
(A)
2SJ527(L),2SJ527(S)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
20
10
Crss
5
2
V
GS
= 0
f = 1 MHz
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
0
0
V
DD
= –10 V
V
DS
–25 V
–20
–50 V
–4
I
D
= –5 A
–40
–8
–60
–80
–100
0
V
GS
–12
V
DD
= –50 V
–25 V
–10 V
–16
4
8
12 16
Gate Charge Qg (nc)
–20
20
Switching Characteristics
100
t
d(off)
50
tf
20
t
d(on)
10
5
tr
2
1
–0.1 –0.2
V
GS
= –10 V, V
DD
= 30 V
duty < 1 %
–0.5 –1 –2 –5 –10
Drain Current I
D
(A)
5
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]