2SJ528S 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

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2SJ528S

Silicon P Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

Main Characteristics

Power vs. Temperature Derating

40

30

20

10

0

50

100

150

200

Case Temperature Tc (°C)

2SJ528(L),2SJ528(S)

–100

–30

–10

–3

–1

–0.3

–0.1

Maximum Safe Operation Area

10 µs

DC

Operation in

this area is

POWpe=ra1ti0onm(1sT1c(m10=s02s5hµ·oCst))

limited by R DS(on)

–0.03

Ta = 25 °C

–0.01

–0.1 –0.3 –1

–3 –10 –30 –100

Drain to Source Voltage V DS (V)

Typical Output Characteristics

–10

–4 V Pulse Test

–10 V

–8

–6 V

–5 V

–3.5 V

–6

–4

–3 V

–2

VGS = –2.5 V

0

–2 –4 –6 –8 –10

Drain to Source Voltage V DS (V)

Typical Transfer Characteristics

–10

V DS = –10 V

Pulse Test

–8

–6

–4

Tc = 75 °C

25 °C

–2

–25 °C

0

–1 –2 –3 –4 –5

Gate to Source Voltage V GS (V)

3

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