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零件编号
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2SJ528 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SJ528
Silicon P Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ528 Datasheet PDF : 9 Pages
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2SJ528(L),2SJ528(S)
Body–Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 50 A / µs
5
–0.1 –0.3
V
GS
= 0, Ta = 25 °C
–1 –3 –10 –20
Reverse Drain Current I
DR
(A)
5000
1000
300
100
Typical Capacitance vs.
Drain to Source Voltage
V
GS
= 0
f = 1 MHz
Ciss
Coss
30
Crss
10
0 –10 –20 –30 –40 –50
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
0
0
V
DD
= –10 V
–25 V
–20
–50 V
I
D
= –7 A
–4
–40
V
DS
–60
–80
–8
V
GS
V
DD
= –10 V
–12
–25 V
–50 V
–16
–100
0
8
16 24 32
Gate Charge Qg (nc)
–20
40
1000
300
100
30
10
Switching Characteristics
V
GS
= –10 V, V
DD
= –30 V
Pw = 5 µs, duty < 1 %
t
d(off)
tf
tr
t
d(on)
3
1
–0.1 –0.3
–1
–3 –10 –20
Drain Current I
D
(A)
5
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