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2SJ529L 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SJ529L
Silicon P-Channel MOS FET High Speed Power Switching
Hitachi -> Renesas Electronics
2SJ529L Datasheet PDF : 9 Pages
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2SJ529(L),2SJ529(S)
Reverse Drain Current vs.
Source to Drain Voltage
–10
Pulse Test
–8
–6
–10 V
–4
–5 V
–2
V
GS
= 0, 5 V
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V
SD
(V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
20
I
AP
= –10 A
16
V
DD
= –25 V
duty < 0.1 %
Rg
≥
50
Ω
12
8
4
0
25 50 75 100 125 150
Channel Temperature Tch (
°
C)
Vin
–15 V
Avalanche Test Circuit
V
DS
Monitor
Rg
50
Ω
L
I
AP
Monitor
D. U. T
V
DD
Avalanche Waveform
E
AR
=
1
2
• L • I
AP
2
•
V
DSS
V
DSS
– V
DD
I
AP
I
D
V
(BR)DSS
V
DS
V
DD
0
6
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