2SJ527STL-E 查看數據表（PDF） - Renesas Electronics
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2SJ527STL-E Datasheet PDF : 9 Pages
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2SJ527(L), 2SJ527(S)
Static Drain to Source on State Resistance
vs. Temperature
2.0
Pulse Test
1.6
1.2
–2 A
ID = –4 A
0.8 VGS = –4 V
–1 A
0.4
0
–40
–10 V –1 A, –2 A –5 A
0
40 80 120 160
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
Pulse Test
50
20
10
–0.1 –0.2
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
–0.5 –1 –2 –5 –10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = –10 V
–25 V
ID = –5 A
–20
–50 V
–4
–40
–8
VDS
–60
VDD = –50 V
–25 V
–12
VGS
–10 V
–80
–16
–100
0
4
8
12 16
Gate Charge Qg (nc)
–20
20
Forward Transfer Admittance vs.
Drain Current
10
5
Tc = –25°C
2
25°C
1
75°C
0.5
0.2
0.1
–0.1 –0.2 –0.5 –1
VDS = –10 V
Pulse Test
–2 –5 –10
Drain Current ID (A)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
20
Crss
10
5
2 VGS = 0
f = 1 MHz
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
Switching Characteristics
100
td(off)
50
tf
20
td(on)
10
5
tr
2
1
–0.1 –0.2
VGS = –10 V, VDD = –30 V
duty ≤ 1 %
–0.5 –1 –2 –5 –10
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 8
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