2SK1400 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

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2SK1400

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK1400, 2SK1400A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source

K1400 V(BR)DSS 300

breakdown voltage K1400A

350

Gate to source breakdown

voltage

V(BR)GSS ±30

Gate to source leak current

I GSS

—

Zero gate voltage K1400 IDSS

—

drain current

K1400A

Gate to source cutoff voltage VGS(off) 2.0

Static drain to source K1400 RDS(on) —

on state resistance K1400A

—

Forward transfer admittance |yfs|

3.0

Input capacitance

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse test

Typ

—

—

—

—

—

—

0.50

0.60

5.0

635

230

40

10

50

60

40

1.0

240

Max

—

—

—

±10

250

3.0

0.70

0.80

—

—

—

—

—

—

—

—

—

—

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 240 V, VGS = 0

VDS = 280 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 4 A, VGS = 10 V *1

ID = 4 A, VDS = 10 V *1

VDS = 10 V, VGS = 0,

f = 1 MHz

ID = 4 A, VGS = 10 V,

RL = 7.5 Ω

IF = 7 A, VGS = 0

IF = 7 A, VGS = 0,

diF/dt = 100 A/µs

3

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