2SK1402 查看數據表（PDF） - Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SK1402

Silicon N Channel MOS FET

Renesas Electronics 

2SK1402, 2SK1402A

Absolute Maximum Ratings

Item

Drain to source voltage

2SK1402

2SK1402A

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Electrical Characteristics

Symbol

VDSS

VGSS

ID

ID(pulse)*1

IDR

Pch*2

Tch

Tstg

Item

Symbol Min

Typ

Drain to source

2SK1402

V(BR)DSS

600

—

breakdown voltage

2SK1402A

650

—

Gate to source breakdown voltage

V(BR)GSS

±30

—

Gate to source leak current

IGSS

—

—

Zero gate voltage drain 2SK1402

IDSS

—

—

current

2SK1402A

Gate to source cutoff voltage

VGS(off)

2.0

—

Static drain to source on 2SK1402 RDS(on)

—

1.8

state resistance

2SK1402A

—

2.0

Forward transfer admittance

|yfs|

2.2

3.5

Input capacitance

Ciss

—

600

Output capacitance

Coss

—

140

Reverse transfer capacitance

Crss

—

25

Turn-on delay time

td(on)

—

8

Rise time

tr

—

30

Turn-off delay time

td(off)

—

60

Fall time

tf

—

35

Body to drain diode forward voltage

VDF

—

0.9

Body to drain diode reverse recovery

trr

time

—

300

Note: 3. Pulse test

Ratings

600

650

±30

4

16

4

50

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C

°C

Max

—

—

—

±10

250

3.0

2.4

2.6

—

—

—

—

—

—

—

—

—

—

(Ta = 25°C)

Unit

Test conditions

V ID = 10 mA, VGS = 0

V IG = ±100 µA, VDS = 0

µA VGS = ±25 V, VDS = 0

µA VDS = 500 V, VGS = 0

VDS = 550 V, VGS = 0

V ID = 1 mA, VDS = 10 V

Ω

ID = 2 A, VGS = 10 V *3

S

ID = 2 A, VDS = 10 V *3

pF VDS = 10 V, VGS = 0,

pF f = 1 MHz

pF

ns ID = 2 A, VGS = 10 V,

ns RL = 15 Ω

ns

ns

V IF = 4 A, VGS = 0

ns IF = 4 A, VGS = 0,

diF/dt = 100 A/µs

Rev.2.00 Sep 07, 2005 page 2 of 6

Share Link: