K170 查看數據表（PDF） - Toshiba
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K170 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK170
2SK170
Low Noise Audio Amplifier Applications
Unit: mm
• Recommended for first stages of EQ and M.C. head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA)
• High breakdown voltage: VGDS = −40 V
• Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = 10 V, ID = 1 mA, f = 1 kHz)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
−40
V
10
mA
400
mW
125
°C
−55~125
°C
JEDEC
TC-92
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
SC-43
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5F1D
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
Symbol
Test Condition
IGSS
VGS = −30 V, VDS = 0
V (BR) GDS VDS = 0, IG = −100 μA
IDSS
VDS = 10 V, VGS = 0
(Note)
VGS (OFF) VDS = 10 V, ID = 0.1 μA
⎪Yfs⎪
VDS = 10 V, VGS = 0, f = 1 kHz
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
Crss
VDG = 10 V, ID = 0, f = 1 MHz
NF (1)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 1 kHz
NF (2)
VDS = 10 V, ID = 1.0 mA, RG = 1 kΩ,
f = 1 kHz
Note: IDSS classification GR: 2.6~6.5 mA, BL: 6.0~12 mA, V: 10~20 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−40 ⎯
⎯
V
2.6
⎯
20
mA
−0.2
⎯
−1.5
V
⎯
22
⎯
mS
⎯
30
⎯
pF
⎯
6
⎯
pF
⎯
1.0
10
dB
⎯
0.5
2
1
2007-11-01
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