K2173(2002) 查看數據表（PDF） - Toshiba
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K2173 Datasheet PDF : 6 Pages
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2SK2173
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2173
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
4 V gate drive
Low drain−source ON resistance : RDS (ON) = 13 mΩ (typ.)
High forward transfer admittance : |Yfs| = 40 S (typ.)
Low leakage current
: IDSS = 100 µA (max) (VDS = 60 V)
Enhancement−mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
60
V
60
V
±20
V
50
A
200
A
125
W
683
mJ
50
A
12.5
mJ
150
°C
−55~150
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
1.0
°C / W
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 371 µH, RG = 25 Ω, IAR = 50 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002- 07- 22
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