K2173(2002) 查看數據表（PDF） - Toshiba

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K2173
(Rev.:2002)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Gate leakage current

Drain cut–off current

Drain–source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

IGSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±16 V, VDS = 0 V

VDS = 60 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 4 V, ID = 25 A

VGS = 10 V, ID = 25 A

VDS = 10 V, ID = 25 A

VDS = 10 V, VGS = 0 V, f = 1 MHz

Rise time

tr

Turn−on time

ton

Switching time

Fall time

tf

Turn−off time

Total gate charge (Gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“miller”) charge

toff

Qg

Qgs

VDD ≈ 48 V, VGS = 10 V, ID = 50 A

Qgd

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovered charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 50 A, VGS = 0 V

IDR = 50 A, VGS = 0 V

dIDR / dt = 50 A / µs

Marking

2SK2173

Min Typ. Max Unit

—

—

±10

µA

—

—

100

µA

60

—

—

V

0.8

—

2.0

V

—

19

25

mΩ

—

13

17

28

40

—

S

— 3550 —

—

550

—

pF

— 1600 —

—

25

—

—

55

—

ns

—

60

—

—

180

—

—

110

—

—

70

—

nC

—

40

—

Min Typ. Max Unit

—

—

50

A

—

—

200

A

—

—

−1.7

V

—

120

—

ns

—

0.2

—

µC

K2173

※

Type

※ Lot Number

Month (starting from alphabet A)

Year (last number of the christian era)

2

2002- 07- 22

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