BSH107 查看數據表（PDF） - Philips Electronics
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BSH107 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH107
Drain Current, ID (A)
5
4.5 VDS > ID X RDS(on)
4
3.5
3
2.5
2
1.5
1
150 C
Tj = 25 C
0.5
0
0
0.5
1
1.5
Gate-Source Voltage, VGS (V)
BSH107
2
Fig.7. Typical transfer characteristics.
ID = f(VGS)
Transconductance, gfs (S)
10
BSH107
9
Tj = 25 C
8
150 C
7
6
5
4
3
2
1
VDS > ID X RDS(on)
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Drain Current, ID (A)
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised Drain-Source On Resistance
1.8
1.7 RDS(ON) @ Tj
1.6 RDS(ON) @ 25C
1.5
2.5 V
1.4
VGS = 4.5 V
1.3
1.2
1.1
1
0.9
0.8
0
25
50
75
100
125
Junction Temperature, Tj (C)
1.8 V
150
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(to), (V)
1
0.9
0.8
typical
0.7
0.6
0.5
0.4
minimum
0.3
0.2
0.1
0
0
25
50
75
100
125
150
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
Drain Current, ID (A)
1E-01
VDS = 5 V
1E-02 Tj = 25 C
1E-03
BSH107
1E-04
1E-05
1E-06
1E-07
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Gate-Source Voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C
Capacitances, Ciss, Coss, Crss (pF)
1000
100
BSH107
Ciss
Coss
Crss
10
0.1
1
10
100
Drain-Source Voltage, VDS (V)
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1998
4
Rev 1.000
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