BSH107 查看數據表（PDF） - Philips Electronics
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BSH107 Datasheet PDF : 7 Pages
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Philips Semiconductors
N-channel enhancement mode
MOS transistor
Product specification
BSH107
Gate-source voltage, VGS (V)
4.5
VDD = 20 V
4 RD = 20 Ohms
3.5 Tj = 25 C
3
2.5
2
1.5
1
0.5
0
0
2
4
6
Gate charge, QG (nC)
BSH107
8
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG)
Source-Drain Diode Current, IF (A)
-5
BSH107
-4.5
-4
-3.5
-3
-2.5
150 C
-2
Tj = 25 C
-1.5
-1
-0.5
0
0
-0.2
-0.4
-0.6
-0.8
-1
Drain-Source Voltage, VSDS (V)
Fig.14. Typical reverse diode current.
IF = f(VSDS); conditions: VGS = 0 V; parameter Tj
August 1998
5
Rev 1.000
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