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零件编号
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K2075 查看數據表(PDF) - Hitachi -> Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
K2075
Silicon N-Channel MOS FET
Hitachi -> Renesas Electronics
K2075 Datasheet PDF : 10 Pages
1
2
3
4
5
6
7
8
9
10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
5
Pulse Test
4
3
I
D
= 20 A
2
10 A
1
5A
0
4
8
12 16 20
Gate to Source Voltage V
GS
(V)
2SK2075
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
1
0.5
0.2
10 V
0.1
0.05
1
V
GS
= 15 V
2
5 10 20 50 100
Drain Current I
D
(A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
I
D
= 20 A
0.2
5 A
10 A
0.1
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
–25 °C
10
Tc = 25 °C
75 °C
3
1
0.3
0.1
0.1
V
DS
= 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I
D
(A)
5
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