2SK2225 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK2225

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2225

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %

2. Value at Tc = 25 °C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

1500

V

±20

V

2

A

7

A

2

A

50

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

1500

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

—

resistance

Forward transfer admittance |yfs|

0.45

Typ

—

—

—

—

9

0.75

Max

—

±1

500

4.0

12

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

990 —

125 —

60

—

17

—

50

—

150 —

50

—

0.9

—

1750 —

Unit

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

VGS = ±20 V, VDS = 0

VDS =1200 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 1 A

VGS = 15 V*1

ID = 1 A

VDS = 20 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 1 A

VGS = 10 V

RL = 30 Ω

IF = 2 A, VGS = 0

IF = 20 A, VGS = 0,

diF / dt = 100 A / µs

2

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