2SK2225 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SK2225 Datasheet PDF : 9 Pages
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5000
Body to Drain Diode Reverse
Recovery Time
2000
1000
500
di / dt = 100 A / µs, Ta = 25 °C
200 VGS = 0, Pulse Test
100
50
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current I DR (A)
2SK2225
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
1000
20
VDD = 250 V
800
400 V
600 V
VDS
600
16
VGS
12
400
8
200
VDD = 250 V
400 V
I D = 2.5 A 4
600 V
0
0
20 40 60
80 100
Gate Charge Qg (nc)
1000
500
200
Switching Characteristics
t d(off)
VGS = 10 V
PW = 2 µs
duty < 1 %
100
tf
50
tr
20
t d(on)
10
0.05 0.1 0.2 0.5 1 2
5
Drain Current I D (A)
5
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