2SK2225 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

生产厂家

2SK2225

Silicon N-Channel MOS FET

Hitachi -> Renesas Electronics 

2SK2225

Reverse Drain Current vs.

Source to Drain Voltage

5

Pulse Test

4

3

2

1 10 V, 15 V

VGS = 0, –5 V

0

0.4 0.8 1.2 1.6 2.0

Source to Drain Voltage V SD (V)

Normalized Transient Thermal Impedance vs. Pulse Width

3

D=1

1

0.5

Tc = 25°C

0.3

0.2

0.1

0.03

0.01

10 µ

0.1

0.05

0.02

0.01 1shot pulse

100 µ

θch – c(t) = γ s (t) • θ ch – c

θch – c = 2.50 °C/W, Tc = 25 °C

PDM

PW

T

D=

PW

T

1m

10 m

100 m

1

10

Pulse Width PW (S)

6

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