2SK2225 查看數據表（PDF） - Renesas Electronics
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2SK2225 Datasheet PDF : 7 Pages
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2SK2225
Static Drain to Source on State
Resistance vs. Temperature
20
16
ID = 2 A
12
0.5 A, 1 A
8
4
VGS = 15 V
Pulse Test
0
–40
0
40
80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
5000
2000
1000
500
di / dt = 100 A / µs, Ta = 25°C
200 VGS = 0, Pulse Test
100
50
0.05 0.1 0.2 0.5 1 2
5
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
1000
20
800
VDS
600
VDD = 250 V
400 V
600 V
16
VGS
12
400
8
200
0
VDD = 250 V
400 V
600 V
20 40 60
4
ID = 2.5 A
0
80 100
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
10
5
VDS = 25 V
Pulse Test
2
Tc = –25°C
1
25°C
75°C
0.5
0.2
0.1
0.05 0.1 0.2 0.5 1 2
5
Drain Current ID (A)
10000
1000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
0
10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
1000
500
200
td(off)
VGS = 10 V
PW = 2 µs
duty < 1 %
100
tf
50
tr
20
td(on)
10
0.05 0.1 0.2 0.5 1 2
5
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
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