2SK2084L 查看數據表（PDF） - Renesas Electronics
零件编号
产品描述 (功能)
生产厂家
2SK2084L Datasheet PDF : 8 Pages
| |||
2SK2084(L), 2SK2084(S)
Static Drain to Source on State
Resistance vs. Temperature
0.20
Pulse Test
0.16
0.12
5A
0.08
VGS = 4 V
1A
2A
0.04
0
–40
1A
10 V
2A
5A
0
40 80 120 160
Case Temperature TC (°C)
Body to Drain Diode Reverse
Recovery Time
200
100
50
di / dt = 20 A / µs
VGS = 0, Ta = 25°C
20
10
0.1 0.2 0.5 1 2
5 10
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
50
20
40
VDD = 20 V
10 V
5V
30
VDS
20
VGS 16
12
8
10
VDD = 20 V
4
10 V
5V
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Forward Transfer Admittance
vs. Drain Current
20
10
VDS = 10 V
Pulse Test
5
Tc = –25°C
25°C
2
75°C
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
1000
Ciss
Coss
100
VGS = 0
f = 1 MHz
Crss
10
0
4
8
12 16
20
Drain to Source Voltage VDS (V)
Switching Characteristics
200
td(off)
100
50
VGS = 10 V
VDD = 20 V
PW = 5 µs
20 duty < 1 %
tf
tr
td(on)
10
0.1 0.2 0.5 1 2
5 10
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 7
Share Link: 