2SK2795 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SK2795 Datasheet PDF : 6 Pages
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2SK2795
Silicon N Channel MOS FET
UHF Power Amplifier
Features
• High power output, High gain, High effeciency
PG = 11dB, Pout = 24dBm, ηD = 40 %min. (f = 836.5MHz)
• Compact package capable of surface mounting
Outline
UPAK
ADE-208-466 A (Z)
2nd. Edition
November. 1996
21
3
4
1. Gate
2. Source
3. Drain
4. Source
This Device is sensitive to Electro Static Discharge.
An Adequate handling procedure is requested.
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