2SK2927 查看數據表（PDF） - Hitachi -> Renesas Electronics

零件编号

产品描述 (功能)

生产厂家

2SK2927

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2927

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS =0.055 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

TO–220AB

ADE-208-550D (Z)

5th. Edition

Jun 1998

D

G

S

1

2

3

1. Gate

2. Drain(Flange

3. Source

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