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2SK2992 查看數據表(PDF) - Toshiba

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2SK2992 Datasheet PDF : 6 Pages
1 2 3 4 5 6
Marking
2SK2992
Note 5: A line to the right of a Lot No. identifies the indication of
Part No.
(or abbreviation code)
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
ZD
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
Note 5
The RoHS is the Directive 2002/95/EC of the European Parliament
Lot No.
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain cutoff current
Drainsource breakdown
voltage
Gate threshold voltage
Drainsource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Symbol
Test Condition
IGSS
IDSS
VGS = ±16 V, VDS = 0 V
VDS = 200 V, VGS = 0 V
V (BR) DSS ID = 10 mA, VGS = 0 V
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
tr
Min Typ. Max Unit
±10
μA
100
μA
200
V
2.0
3.5
V
2.2 3.5
0.5 0.9
S
90
10
pF
30
9
Turnon time
ton
Switching time
Fall time
tf
17
ns
16
Turnoff time
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) charge
toff
Qg
Qgs
VDD 160 V, VGS = 10 V, ID = 1 A
Qgd
45
3.0
1.8
nC
1.2
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
Min
IDR = 1 A, VGS = 0 V
IDR = 1 A, VGS = 0 V, dIDR / dt = 100 A / μs
Typ. Max Unit
1
A
3
A
1.5
V
85
ns
190 —
nC
2
2009-09-29

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