2SK3077(2001) 查看數據表（PDF） - Toshiba

零件编号

产品描述 (功能)

生产厂家

2SK3077
(Rev.:2001)

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

Toshiba 

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

Output Power

Drain Efficiency

Power Gain

Threshold Voltage

Drain Cut-off Current

Gate-Source Leakage Current

SYMBOL

TEST CONDITION

PO

ηD

GP

Vth

IDSS

IGSS

VDS = 4.8V

Iidle = 43 mA (VGS = adjust)

f = 915 MHz, Pi = 0 dBmW

VDS = 4.8 V, ID = 0.5 mA

VDS = 10 V, VGS = 0 V

VGS = 5 V, VDS = 0 V

CAUTION

This transistor is the electrostatic sensitive device.

Please handle with caution.

RF OUTPUT POWER TEST FIXTURE

2SK3077

MIN TYP. MAX UNIT

15.0 —

— dBmW

— 20.0 —

%

15.0 —

—

dB

0.25

—

1.25

V

—

—

10

µA

—

—

5

µA

2

2001-12-26

Share Link: