2SK3077 查看數據表（PDF） - Toshiba

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2SK3077

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

Toshiba 

2SK3077

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

2SK3077

900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

(Note)The TOSHIBA products listed in this document are intended for

high frequency Power Amplifier of telecommunications equipment. These

TOSHIBA products are neither intended nor warranted for any other use.

Do not use these TOSHIBA products listed in this document except for

high frequency Power Amplifier of telecommunications equipment.

z Output Power

z Gain

z Drain Efficiency

: PO = 15.0 dBmW (Min.)

: GP = 15.0 dB (Min.)

: ηD = 20% (Typ.)

MAXIMUM RATINGS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

RATING

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation

Channel Temperature

Storage Temperature Range

VDSS

VGSS

ID

PD*

Tch

Tstg

10

5

0.1

250

150

−45~150

*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB

UNIT

V

V

A

mW

°C

°C

MARKING

JEDEC

JEITA

TOSHIBA

Unit: mm

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2−2K1D

1

2007-2-19

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