2SK3077 查看數據表（PDF） - Toshiba

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2SK3077

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

Toshiba 

2SK3077

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN TYP. MAX UNIT

Output Power

Drain Efficiency

Power Gain

Threshold Voltage

Drain Cut-off Current

Gate-Source Leakage Current

PO

ηD

GP

Vth

IDSS

IGSS

VDS = 4.8V

Iidle = 43 mA (VGS = adjust)

f = 915 MHz, Pi = 0 dBmW

VDS = 4.8 V, ID = 0.5 mA

VDS = 10 V, VGS = 0 V

VGS = 5 V, VDS = 0 V

15.0 —

— dBmW

— 20.0 —

%

15.0 —

—

dB

0.25 —

1.25

V

—

—

10

µA

—

—

5

µA

Note 1: These characteristic values are measured using measurement tools specified by Toshiba.

CAUTION

This transistor is the electrostatic sensitive device.

Please handle with caution.

RF OUTPUT POWER TEST FIXTURE

2

2007-2-19

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