2SK3077A 查看數據表（PDF） - Toshiba
零件编号
产品描述 (功能)
生产厂家
2SK3077A Datasheet PDF : 5 Pages
| |||
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3077A
2SK3077A
VHF/UHF Band Amplifier Applications
Unit: mm
· Output power: Po ≥ 20.5dBmW
· Gain: Gp ≥ 10.5dB
· Drain Efficiency: ηD ≥ 50%
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
VDSS
VGSS
ID
PD
Tch
Tstg
10
V
5
V
0.1
A
0.1
W
150
°C
−45~150
°C
Marking
4
3
WA
1, 3 Source
2 Gate
4 Drain
1
2
JEDEC
JEITA
TOSHIBA
―
―
2-2K1D
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Load mismatch
(Note 1)
PO
ηD
GP
Vth
IDSS
IGSS
¾
VDS = 4.5 V, Iidle = 20 mA
(VGS = adjust)
f = 470 MHz, Pi = 10dBmW
VDS = 4.8 V, ID = 0.5 mA
VDS = 10 V, VGS = 0 V
VGS = 5 V, VDS = 0 V
VDS = 6.5 V, f = 470 MHz,
Pi = 10dBmW,
Po = 20.5dBmW (VGS = adjust)
VSWR LOAD 10:1 all phase
20.5 ¾
¾ dBmW
50
¾
¾
%
10.5 ¾
¾
dB
0.25
¾
1.25
V
¾
¾
10
µA
¾
¾
5
µA
No degradation
¾
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 1: When the RF output power test fixture is used
1
2002-01-09
Share Link: 