2SK3078 查看數據表（PDF） - Toshiba
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2SK3078 Datasheet PDF : 4 Pages
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2SK3078
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3078
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
l Output Power
l Gain
l Drain Efficiency
: PO = 27.0 dBmW (Min.)
: GP = 12.5 dB (Min.)
: ηD = 46% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature Range
VDSS
VGSS
ID
PD*
Tch
Tstg
10
5
0.5
3.0
150
−45~150
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
UNIT
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Unit: mm
—
SC−62
2−5K1D
1
2001-12-26
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