2SK3078 查看數據表（PDF） - Toshiba

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2SK3078

TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

Toshiba 

ELECTRICAL CHARACTERISTICS (Ta = 25°C)

CHARACTERISTIC

Output Power

Drain Efficiency

Power Gain

Threshold Voltage

Drain Cut-off Current

Gate-Source Leakage Current

SYMBOL

TEST CONDITION

PO

ηD

GP

Vth

IDSS

IGSS

VDS = 4.8 V

Iidle = 108 mA (VGS = adjust)

f = 915 MHz, Pi = 14.5 dBmW

VDS = 4.8 V, ID = 0.5 mA

VDS = 10 V, VGS = 0 V

VGS = 5 V, VDS = 0 V

CAUTION

This transistor is the electrostatic sensitive device.

Please handle with caution.

RF OUTPUT POWER TEST FIXTURE

2SK3078

MIN TYP. MAX UNIT

27.0 ―

― dBmW

―

46.0 ―

%

12.5 ―

―

dB

0.20 ―

1.20 V

―

―

10 µA

―

―

5 µA

2

2001-12-26

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