2SK3079A 查看數據表（PDF） - Toshiba
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2SK3079A Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
2SK3079A
Characteristics
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Load mismatch
(Note 2)
Symbol
PO
ηD
Gp
Vth
IDSS
IGSS
⎯
Test Condition
VDS = 4.5 V, Iidle = 50 mA
(VGS = adjust)
f = 470 MHz, Pi = 20dBmW
ZG = ZL = 50 Ω
VDS = 4.5 V, ID = 0.5 mA
VDS = 10 V, VGS = 0 V
VGS = 5 V, VDS = 0 V
VDS = 5 V, f = 470 MHz,
Pi = 20dBmW,
Po = 33.5dBmW (VGS = adjust)
VSWR LOAD 10:1 all phase
Min Typ. Max Unit
33.5 ⎯
50.0 ⎯
13.5 ⎯
⎯
0.8
⎯
⎯
⎯
⎯
⎯ dBmW
⎯
%
⎯
dB
⎯
V
10
μA
5
μA
No degradation
⎯
Note 2: These characteristic values are measured using measurement tools specified by Toshiba.
Test Circuit
Pi 2200 pF
ZG = 50 Ω
L1
20 pF
20 pF
3.3 Ω
2200 pF
680 kΩ
10000 pF
VGS
L2
13 pF 20 pF
2200 pF
Po
ZL = 50 Ω
10 μF
10000 pF
VDS
2
2014-03-01
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