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零件编号
产品描述 (功能)
K3176 查看數據表(PDF) - Toshiba
零件编号
产品描述 (功能)
生产厂家
K3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)
Toshiba
K3176 Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
20
10
8
4
6
16
15
5
12
Common source
Tc
=
25°C
Pulse test
3.8
8
3.6
4
VGS
=
3.4 V
0
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage V
DS
(V)
I
D
– V
GS
50
Common source
VDS
=
10 V
Pulse test
40
30
20
25
10
Tc
= −
55°C
100
0
0
2
4
6
8
10
Gate-source voltage V
GS
(V)
2SK3176
50
15 4.8
10
6
40 8
5
I
D
– V
DS
4.6
Common source
Tc
=
25°C
Pulse test
4.4
30
4.2
4
20
3.8
10
VGS
=
3.6 V
0
0
4
8
12
16
20
Drain-source voltage V
DS
(V)
V
DS
– V
GS
5
Common source
Tc
=
25°C
Pulse test
4
3
2
ID
=
30 A
1
15
7.5
0
0
4
8
12
16
20
Gate-source voltage V
GS
(V)
|Y
fs
| – I
D
100
Common source
50
VDS
=
10 V
25
Pulse test
30
Tc
= −
55°C
100
10
5
3
1
0.3 0.5
1
3 5 10
30 50 100
Drain current I
D
(A)
R
DS (ON)
– I
D
0.5
Common source
0.3
Tc
=
25°C
Pulse test
0.1
0.05
VGS
=
10 V
0.03
15
0.01
1
35
10
30 50
100
Drain current I
D
(A)
3
2009-09-29
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