K3176 查看數據表（PDF） - Toshiba
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K3176 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
0.10
Common source
VGS = 10 V
Pulse test
0.08
ID = 30 A
15
7.5
0.06
0.04
0.02
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
2SK3176
IDR – VDS
100
Common source
50 Tc = 25°C
Pulse test
30
10
10
5
5
3
3
VGS = 0 V
1
0
0.4
0.8
1.2
1.6
2.0
Drain-source voltage VDS (V)
Capacitance – VDS
10000
Ciss
3000
1000
Coss
300
100
30
0.1
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
0.3
1
3
Drain-source voltage
10
VDS
Crss
30
100
(V)
Vth – Tc
5
Common source
VDS = 10 V
4
ID = 1 mA
Pulse test
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
250
200
150
100
50
0
0
PD – Tc
40
80
120
160
200
Case temperature Tc (°C)
Dynamic Input/Output
Characteristics
200
VDS
150
20
Common source
ID = 30 A
Tc = 25°C
Pulse test
15
80
VDD = 40 V
160
100
10
50
5
VGS
0
0
0
40
80
120
160
200
Total gate charge Qg (nC)
4
2009-09-29
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