K3149 查看數據表（PDF） - Hitachi -> Renesas Electronics

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K3149

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3149

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

Gate to source voltage

Drain current

Drain peak current

Body-drain diode reverse drain current

Avalanche current

Avalanche energy

Channel dissipation

VDSS

VGSS

ID

I Note1

D(pulse)

I DR

I Note3

AP

E Note3

AR

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note:

1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Drain to source breakdown voltage V(BR)DSS 100 —

Gate to source breakdown voltage V(BR)GSS ±20 —

Gate to source leak current

I GSS

—

—

Zero gate voltege drain current

I DSS

—

—

Gate to source cutoff voltage

VGS(off)

1.0

—

Static drain to source on state

RDS(on)

—

45

resistance

RDS(on)

—

65

Forward transfer admittance

|yfs|

8.5 15

Input capacitance

Ciss —

900

Output capacitance

Coss —

400

Reverse transfer capacitance

Crss —

210

Turn-on delay time

t d(on)

—

15

Rise time

tr

—

120

Turn-off delay time

t d(off)

—

200

Fall time

tf

—

150

Body–drain diode forward voltage VDF

—

0.9

Body–drain diode reverse

recovery time

t rr

—

90

Note: 4. Pulse test

Ratings

100

±20

20

60

20

20

40

50

150

–55 to +150

Max Unit

—

V

—

V

±10 µA

10

µA

2.5 V

60

mΩ

85

mΩ

—

S

—

pF

—

pF

—

pF

—

ns

—

ns

—

ns

—

ns

—

V

—

ns

Unit

V

V

A

A

A

A

mJ

W

°C

°C

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±16 V, VDS = 0

VDS = 100 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 10 A, VGS = 10 VNote4

ID = 10 A, VGS = 4 V Note4

ID = 10 A, VDS = 10 V Note4

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 10 A, VGS = 10 V

RL = 3 Ω

IF = 20 A, VGS = 0

IF = 20 A, VGS = 0

diF/ dt = 50 A/ µs

2

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