K3175A 查看數據表（PDF） - Hitachi -> Renesas Electronics

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K3175A

Silicon N Channel MOS FET UHF Power Amplifier

Hitachi -> Renesas Electronics 

2SK3175A

Silicon N Channel MOS FET

UHF Power Amplifier

Features

• High power output, High gain, High efficiency

P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz)

• Compact package

Outline

RFPAK-G

3

2

D

ADE-208-1452 (Z)

1st. Edition

September 2001

G

S

1

1. Drain

2. Source

3. Gate

This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.

In AC testing , the part should be mounted on heat sink with thermal compound.

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